Active matrix substrate and display apparatus

ABSTRACT

The present disclosure illustrates an active matrix substrate includes pixel electrodes forming the pixels; first gate lines respectively disposed between the pixel electrodes extended in parallel to each other; first source line respectively disposed between the pixel electrodes and extended in a direction crossing the first gate lines; capacitor lines respectively disposed between the first gate lines and extended in nonparallel to from one another; switch devices respectively disposed on the pixel electrodes; second source lines respectively disposed between the pixel electrodes and extended in parallel to the first source lines; second gate lines respectively disposed between the pixel electrode and extended in parallel to the first gate lines. The first gate lines, capacitor lines, first source lines, second gate lines, capacitor lines and second source lines are not in electrical connection with each other.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a National Stage Application of PCT InternationalPatent Application No. PCT/CN2017/111209 filed on Nov. 15, 2017, under35 U.S.C. § 371, which claims priority to and the benefit of ChinesePatent Application No. 201710743677.8, filed on Aug. 25, 2017, and thedisclosure of which is incorporated herein in its entirety by reference.

BACKGROUND 1. Field

The present disclosure relates to a liquid crystal display technologyfield, and more particularly to an active matrix substrate.

2. Description of the Related Art

A flat-panel display can use two sets of address lines which areperpendicular to each other, to control pixels arranged in a matrixform, so as to display an image. Among various display control modes,the most common mode is to control a gate line and a source line to turnon or turn off the corresponding switch device, so that signalstransmitted on the gate lines can be written into the pixels,respectively, thereby changing states of the pixels and controlling thedisplay screen.

In recent years, the flat-panel display technology is fully developed,but the elements of the display panel, such as an active matrixsubstrate, may have some defects caused in the manufacturing process.For example, the gate line and the source line on the active matrixsubstrate both have very long lengths, so a broken line may occur easilyon the gate line and the source line. When at least one of the gatelines or the source lines is broken, a normal voltage (a drain voltage)cannot be applied to pixel electrodes on the disconnected gate line. Asa result, dot defects are visually recognized as a line defect along thedisconnected gate line on the display screen of the liquid crystaldisplay device, and a liquid crystal display device becomes defective asthe number of such line defects increases. As a result, manufacturingyield of the liquid crystal display device is reduced.

SUMMARY

In order to solve aforementioned problems, the present disclosureprovides a liquid crystal display device having broken-line repairfunction, so as to improve the manufacturing yield of the liquid crystaldisplay device.

According to an embodiment, the present disclosure provides an activematrix substrate including: a substrate; a plurality of pixel electrodesdisposed on the substrate and arranged in a matrix form, so as to form aplurality of pixels; a plurality of first gate lines disposed betweenthe plurality of pixel electrodes respectively, and extended in parallelto each other; a plurality of first source lines disposed between theplurality of pixel electrodes respectively, and extended in a directioncrossing the plurality of first gate lines; a plurality of capacitorlines disposed between the plurality of first gate lines respectively,and extended at an angle to one another; a plurality of switch devicesdisposed on the plurality of pixel electrodes respectively, andelectrically connected to the plurality of pixel electrodes, theplurality of first gate lines, the plurality of capacitor lines and theplurality of first source lines, respectively; a plurality of secondsource lines disposed between the plurality of pixel electrodesrespectively, and extended in parallel to the plurality of first sourcelines; a plurality of second gate line disposed between the plurality ofpixel electrodes respectively, and extended in parallel to the pluralityof first gate lines. The plurality of first gate lines, the plurality ofcapacitor lines, the plurality of first source lines, the plurality ofsecond gate lines, and the plurality of second source lines are isolatedfrom each other.

Preferably, when one of the plurality of the first gate lines is broken,an end and the other end of the broken first gate line are conductedthrough the second gate line adjacent to the broken first gate line, anda pair of source line repair sections formed by parts of the two secondsource lines at two sides of the broken first gate line.

Preferably, when one of the first gate lines is broken and one of thesecond gate lines adjacent to the broken first gate line is also brokenand broken locations are between the same two pixel electrodes, an endand the other end of the broken first gate line are conducted through apair of source line repair sections formed by parts of the second sourcelines, and a gate line repair section formed by a part of other secondgate line.

Preferably, when one of the first source lines is broken, an end and theother end of the broken first source line are conducted through thesecond source line adjacent to the first source line, and a pair of gateline repair sections formed by parts of the second gate lines at twosides of the broken first source line.

Preferably, when one of the first source lines is broken, and one of thesecond source lines adjacent to the broken first source line is alsobroken and broken locations are between the two the same pixelelectrodes, an end and the other end of the broken first source line isconducted through a pair of gate line repair sections formed by a partof the second gate lines and a source line repair section formed by apart of the other second source line.

Preferably, when one of the capacitor lines is broken, an end and theother end of the broken capacitor line are conducted through a pair ofsource line repair sections formed by parts of the second source linescorresponding in position to two sides of the broken capacitor line, anda gate line repair section formed by a part of the second gate line.

According to an embodiment, the present disclosure provides a repairmethod for an active matrix substrate. The active matrix substrateincludes a substrate; a plurality of pixel electrodes disposed on thesubstrate and arranged in a matrix form, so as to form a plurality ofpixels; a plurality of first gate lines disposed between the pluralityof pixel electrodes respectively, and extended in parallel to eachother; a plurality of first source lines disposed between the pluralityof pixel electrodes respectively, and extended in a direction crossingthe plurality of first gate lines; a plurality of capacitor linesdisposed between the plurality of first gate lines respectively, andextended at an angle to one another; a plurality of switch devicesdisposed on the plurality of pixel electrodes respectively, andelectrically connected to the plurality of pixel electrodes, theplurality of first gate lines, the plurality of capacitor lines and theplurality of first source lines, respectively; a plurality of secondsource lines disposed between the plurality of pixel electrodesrespectively, and extended in parallel to the plurality of first sourcelines; and a plurality of second gate line disposed between theplurality of pixel electrodes respectively, and extended in parallel tothe plurality of first gate lines. The plurality of first gate lines,the plurality of capacitor lines, the plurality of first source lines,the plurality of second gate lines, and the plurality of second sourcelines are isolated from each other. The repair method includes followingsteps: performing the broken-line inspection process to inspect whetherthe broken line exists on one of the first gate lines and the secondgate lines; if only one of the first gate lines is inspected to bebroken, performing a source line repair-section forming process to cutoff the cut portions of the second source lines disposed at two sides ofthe pixel electrode corresponding to a broken location of the first gateline, so as to form source line repair sections overlapping with thebroken first gate line and the second gate line, wherein a part of thecut portions locate near the same side of the broken first gate lineopposite to the second gate line, and the other part of the cut portionslocate near the same side of the second gate line opposite to the brokenfirst gate line; performing a gate line repair-section forming processon the second gate line, adjacent to the broken first gate line, to cutoff the cut portions of the second gate line respectively located at twosides of the second source lines disposed at two sides of the brokenlocation, so as to form a gate line repair section overlapping with thesecond source lines; and performing a connection process to electricallyconnect portions of the source line repair sections, overlapping withthe broken first gate line, to the broken first gate line respectively,and electrically connect portions of the source line repair sections,overlapping with the second gate line, to the gate line repair section.

According to an embodiment, the present disclosure provides a repairmethod for an active matrix substrate. The active matrix substrateincludes a substrate; a plurality of pixel electrodes disposed on thesubstrate and arranged in a matrix form, so as to form a plurality ofpixels; a plurality of first gate lines disposed between the pluralityof pixel electrodes respectively, and extended in parallel to eachother; a plurality of first source lines disposed between the pluralityof pixel electrodes respectively, and extended in a direction crossingthe plurality of first gate lines; a plurality of capacitor linesdisposed between the plurality of first gate lines respectively, andextended at an angle to one another; a plurality of switch devicesdisposed on the plurality of pixel electrodes respectively, andelectrically connected to the plurality of pixel electrodes, theplurality of first gate lines, the plurality of capacitor lines and theplurality of first source lines, respectively; a plurality of secondsource lines disposed between the plurality of pixel electrodesrespectively, and extended in parallel to the plurality of first sourcelines; and a plurality of second gate line disposed between theplurality of pixel electrodes respectively, and extended in parallel tothe plurality of first gate lines. The plurality of first gate lines,the plurality of capacitor lines, the plurality of first source lines,the plurality of second gate lines, and the plurality of second sourcelines are isolated from each other. The repair method includes followingsteps: preforming the broken-line inspection process to inspect whetherthe broken line exists on one of the first gate lines and the secondgate lines; if one of the first gate lines and one of the second gateline both are inspected to be broken and broken locations are betweenthe same two pixel electrodes, performing a source line repair-sectionforming process to cut off the cut portions of the second source linesdisposed at two sides of the pixel electrode corresponding to brokenlocations of the first gate line and the second gate line, so as to formsource line repair sections overlapping with the broken first gate lineand the other second gate line, wherein a part of the cut portionslocate near the same side of the broken first gate line opposite to theother second gate line, and the other part of the cut portions locatenear the same side of the other second gate line opposite to the brokenfirst gate line; performing a gate line repair-section forming processon the other second gate line to cut off the cut portions of the othersecond gate line respectively located at two sides of the second sourcelines disposed at two sides of the pixel electrode corresponding to thebroken location, so as to form a gate line repair section overlappingwith the second source lines; and performing a connection process toelectrically connect portions of the source line repair sections to thebroken first gate line respectively, and electrically connect portionsof the source line repair sections, overlapping with the other secondgate line, to the gate line repair section.

According to an embodiment, the present disclosure further provides arepair method for an active matrix substrate. The active matrixsubstrate includes a substrate; a plurality of pixel electrodes disposedon the substrate and arranged in a matrix form, so as to form aplurality of pixels; a plurality of first gate lines disposed betweenthe plurality of pixel electrodes respectively, and extended in parallelto each other; a plurality of first source lines disposed between theplurality of pixel electrodes respectively, and extended in a directioncrossing the plurality of first gate lines; a plurality of capacitorlines disposed between the plurality of first gate lines respectively,and extended at an angle to one another; a plurality of switch devicesdisposed on the plurality of pixel electrodes respectively, andelectrically connected to the plurality of pixel electrodes, theplurality of first gate lines, the plurality of capacitor lines and theplurality of first source lines, respectively; a plurality of secondsource lines disposed between the plurality of pixel electrodesrespectively, and extended in parallel to the plurality of first sourcelines; and a plurality of second gate line disposed between theplurality of pixel electrodes respectively, and extended in parallel tothe plurality of first gate lines. The plurality of first gate lines,the plurality of capacitor lines, the plurality of first source lines,the plurality of second gate lines and the plurality of second sourcelines are isolated from each other. The repair method includes followingsteps: preforming the broken-line inspection process to inspect whetherthe broken line exists on one of the first source lines and the secondsource lines; if only one of the first source lines is inspected to bebroken, performing a gate line repair-section forming process to cut offthe cut portions of the second gate lines disposed at two sides of thepixel electrode corresponding to a broken location of the first sourceline, so as to form gate line repair sections overlapping with thebroken first source line and the second source line, wherein a part ofthe cut portions locate near the same side of the broken first sourceline opposite to the first source line, and the other part of the cutportions locate near the same side of the second source line opposite tothe broken first source line; performing a source line repair-sectionforming process on the second source line, adjacent to the broken firstsource line, to cut off the cut portions of the second source linerespectively located at two sides of the second gate lines disposed attwo sides of the pixel electrode corresponding to the broken location,so as to form a source line repair section overlapping with the secondgate lines; and performing a connection process to electrically connectthe gate line repair sections to the broken first source linerespectively, and electrically connect portions of the source linerepair sections, overlapping with the second gate line, to the gate linerepair section.

According to an embodiment, the present disclosure further provides arepair method for an active matrix substrate. The active matrixsubstrate includes a substrate; a plurality of pixel electrodes disposedon the substrate and arranged in a matrix form, so as to form aplurality of pixels; a plurality of first gate lines disposed betweenthe plurality of pixel electrodes respectively, and extended in parallelto each other; a plurality of first source lines disposed between theplurality of pixel electrodes respectively, and extended in a directioncrossing the plurality of first gate lines; a plurality of capacitorlines disposed between the plurality of first gate lines respectively,and extended at an angle to one another; a plurality of switch devicesdisposed on the plurality of pixel electrodes respectively, andelectrically connected to the plurality of pixel electrodes, theplurality of first gate lines, the plurality of capacitor lines and theplurality of first source lines, respectively; a plurality of secondsource lines disposed between the plurality of pixel electrodesrespectively, and extended in parallel to the plurality of first sourcelines; and a plurality of second gate line disposed between theplurality of pixel electrodes respectively, and extended in parallel tothe plurality of first gate lines. The plurality of first gate lines,the plurality of capacitor lines, the plurality of first source lines,the plurality of second gate lines and the plurality of second sourcelines are isolated from each other. The repair method includes followingsteps: performing the broken-line inspection process to inspect whetherthe broken line exists on one of the first source lines and the secondsource lines; if one of the first source lines and one of the secondsource lines both are inspected to be broken, and broken locations arebetween the same two pixel electrodes, performing a gate linerepair-section forming process to cut off the cut portions of the secondgate lines disposed at two sides of the pixel electrode corresponding tothe broken locations of the first source line and the second sourceline, so as to form gate line repair sections overlapping with thebroken first source line and the other second source line, wherein apart of the cut portions locate near the same side of the broken firstsource line opposite to the other second source line, and the other partof the cut portions locate near the same side of the other second sourceline opposite to the broken first source line; performing a source linerepair-section forming process on the other second source line to cutoff the cut portions of the other second source line respectivelylocated at two sides of the second gate lines disposed at two sides ofthe pixel electrode corresponding to the broken location, so as to forma source line repair section overlapping with the second gate lines; andperforming a connection process to electrically connect the gate linerepair sections to the broken first source line respectively, andelectrically connect portions of the gate line repair sections,overlapping with the other second source line, to the source line repairsection.

According to an embodiment, the present disclosure further provides arepair method for an active matrix substrate. The active matrixsubstrate includes a substrate; a plurality of pixel electrodes disposedon the substrate and arranged in a matrix form, so as to form aplurality of pixels; a plurality of first gate lines disposed betweenthe plurality of pixel electrodes respectively, and extended in parallelto each other; a plurality of first source lines disposed between theplurality of pixel electrodes respectively, and extended in a directioncrossing the plurality of first gate lines; a plurality of capacitorlines disposed between the plurality of first gate lines respectively,and extended at an angle to one another; a plurality of switch devicesdisposed on the plurality of pixel electrodes respectively, andelectrically connected to the plurality of pixel electrodes, theplurality of first gate lines, the plurality of capacitor lines and theplurality of first source lines, respectively; a plurality of secondsource lines disposed between the plurality of pixel electrodesrespectively, and extended in parallel to the plurality of first sourcelines; and a plurality of second gate line disposed between theplurality of pixel electrodes respectively, and extended in parallel tothe plurality of first gate lines. The plurality of first gate lines,the plurality of capacitor lines, the plurality of first source lines,the plurality of second gate lines, and the plurality of second sourcelines are isolated from each other. The repair method includes followingsteps: performing the broken-line inspection process to inspect whetherthe broken line exists on one of the capacitor lines; if one of thecapacitor lines is inspected to be broken, performing a source linerepair-section forming process to cut off the cut portions of the secondsource lines disposed at two sides of the pixel electrode correspondingto a broken location of the capacitor line, so as to form source linerepair sections overlapping with the broken capacitor line, wherein apart of the cut portions locate near the same side of the brokencapacitor line opposite to the second gate line, and the other part ofthe cut portions locate near the same side of the second gate lineopposite to the broken capacitor line; performing a gate linerepair-section forming process on the second gate line to cut off thecut portions of the second gate line respectively located at two sidesof the second source lines disposed at two sides of the pixel electrodecorresponding to the broken location, so as to form a gate line repairsection overlapping with the second source lines; and performing aconnection process to electrically connect portions of the source linerepair sections, overlapping with the broken capacitor line, to thebroken capacitor line respectively, and electrically connect portions ofthe gate line repair sections, overlapping with the second source line,to the source line repair sections.

Preferably, the operations of cutting off and connection are performedby laser radiation.

Preferably, the connection areas are coated with nano metal solution.The nano metal solution may include organic solvent and nano metalparticles uniformly distributed in the organic solvent. The nano metalsolution is radiated by laser to be hardened for conduction.

According to aforementioned content, the present disclosure provides anactive matrix substrate which is able to repair the broken line, so thatthe manufacturing yield of the liquid crystal display device can beimproved. Furthermore, during the repair process, the connectionportions of the repair sections are coated with nano metal solution, andthe nano metal solution is radiated by laser to be hardened, therebyconducting the repair sections with line. Furthermore, the gate linesand the capacitor lines are formed separately, so that the gate lineshave lower load and the signal delay on the gate lines can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

The structure, operating principle and effects of the present disclosurewill be described in detail by way of various embodiments which areillustrated in the accompanying drawings.

FIG. 1 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure.

FIG. 2 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken first gate line is repaired.

FIG. 3 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken first gate line and the brokensecond gate line both are repaired.

FIG. 4 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken first source line is repaired.

FIG. 5 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken first source line and thebroken second source line both are repaired.

FIG. 6 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken capacitor line is repaired.

FIG. 7 is a flowchart showing the steps in an operation of a repairmethod for an active matrix substrate of an embodiment of the presentdisclosure.

FIG. 8 is a plan view of a pixel of the active matrix substrate of anembodiment of the present disclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The following embodiments of the present disclosure are herein describedin detail with reference to the accompanying drawings. These drawingsshow specific examples of the embodiments of the present disclosure. Itis to be understood that these embodiments are exemplary implementationsand are not to be construed as limiting the scope of the presentdisclosure in any way. Further modifications to the disclosedembodiments, as well as other embodiments, are also included within thescope of the appended claims. These embodiments are provided so thatthis disclosure is thorough and complete, and fully conveys theinventive concept to those skilled in the art. Regarding the drawings,the relative proportions and ratios of elements in the drawings may beexaggerated or diminished in size for the sake of clarity andconvenience. Such arbitrary proportions are only illustrative and notlimiting in any way. The same reference numbers are used in the drawingsand description to refer to the same or like parts.

It is to be understood that, although the terms ‘first’, ‘second’,‘third’, and so on, may be used herein to describe various elements,these elements should not be limited by these terms. These terms areused only for the purpose of distinguishing one component from anothercomponent. Thus, a first element discussed herein could be termed asecond element without altering the description of the presentdisclosure. As used herein, the term “or” includes any and allcombinations of one or more of the associated listed items.

FIG. 8 is a plan view of a pixel of an active matrix substrate 120 forexemplary illustration. The active matrix substrate 120 includes aplurality of pixel electrodes 112 disposed in a matrix form, a pluralityof thin-film transistors (TFT) 105 disposed on the plurality of pixelelectrodes 112 respectively, a plurality of gate lines 101 disposedbetween the plurality of pixel electrodes 112 respectively and extendedin parallel to each other, a plurality of source lines 103 disposedbetween the pixel electrodes 112, extended in parallel to each other,and crossing the plurality of gate lines 101, and a plurality ofcapacitor lines 102 disposed between the plurality of gate lines 101 andextended in parallel to each other.

The thin-film transistor (TFT) 105 includes a gate electrode 101 aelectrically connected to the gate line 101, a semiconductor layer 104covering the gate electrode 101 a, a source electrode 103 a connected tothe source line 103 disposed over the semiconductor layer 104, and adrain electrode 103 b disposed over the semiconductor layer 104 andopposite to the source electrode 103 a. The drain electrode 103 b isextended to the area where the capacitor line 102 is extended, andelectrically connected to the pixel electrode 112 through a contact hole111 b, so as to form a drain lead-out electrode 107 and a capacitorelectrode 106.

Furthermore, a liquid crystal display device includes the active matrixsubstrate 120 including above-mentioned elements, a counter substratehaving common electrode, and a liquid crystal layer including liquidcrystal molecules and disposed between the active matrix substrate 120and the counter substrate. By controlling the switching functions of theTFTs 105 to transmit corresponding image signals to the pixel electrodes112 connected to the TFT 105 respectively, the liquid crystal displaydevice can display an image. In order to prevent the TFT 105 fromself-discharging in the turn off period, or to prevent image signaldegradation caused by the leakage current of the TFT 105, or to applyvarious harmonic signals for driving the liquid crystal, an auxiliarycapacitor is formed between the capacitor line 102 and the capacitorelectrode 106.

FIG. 1 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure. As shown in FIG. 1. the active matrix substrateincludes a substrate, a plurality of pixel electrodes 11, 12, 13, 14,15, 16, 17, 18 and 19, a plurality of first gate lines 21 and 23, aplurality of first source lines 31 and 33, a plurality of capacitorlines 41, a plurality of switch devices 51, 52 and 53, a plurality ofsecond source lines 32 and 34, and a plurality of second gate lines 22and 24. The plurality of pixel electrodes 11, 12, 13, 14, 15, 16, 17, 18and 19 are disposed on the substrate and arranged in a matrix form toform a plurality of pixels. The plurality of first gate lines 21 and 23are respectively disposed between the pixel electrodes 11, 12, 13, 14,15, 16, 17, 18 and 19, for example, the first gate line 21 is disposedbetween the pixel electrodes 11 and 14, between the pixel electrodes 12and 15, and between the pixel electrodes 13 and 16. The plurality offirst gate lines 21 and 23 are extended in parallel to each other andconfigured to output scan signals. The first source lines 31 and 33 arerespectively disposed between the pixel electrodes 11, 12, 13, 14, 15,16, 17, 18, and 19. For example, the first source line 31 is disposedbetween the pixel electrodes 11 and 13, between the pixel electrodes 14and 16, and between the pixel electrodes 17 and 19. The first sourcelines 31 and 33 are extended in a direction crossing to the first gatelines 21 and 23, and configured to output data signals. The capacitorlines 41 respectively disposed between the first gate lines 21 and 23,extended nonparallel to each other, and configured to output capacitorsignals. The switch devices 51, 52 and 53 are respectively disposed overthe pixel electrodes 11, 12 and 13, and electrically connected to thepixel electrodes 11, 12 and 13, the first gate lines 21, the capacitorlines 41 and the first source lines 31 and 33, respectively. The secondsource lines 32 and 34 respectively disposed between the pixelelectrodes 11, 12, 13, 14, 15, 16, 17, 18, and 19, and extended inparallel to the first source lines 31 and 33. For example, the secondsource lines 32 is disposed between the pixel electrodes 11 and 13,between the pixel electrodes 14 and 16, and between the pixel electrodes17 and 19, and extended in parallel to the first source lines 31. Thesecond source line 32 is used to repair a broken line. The plurality ofsecond gate lines 22 and 24 are respectively disposed between the pixelelectrodes 11, 12, 13, 14, 15, 16, 17, 18, and 19, and extended inparallel to the first gate lines 21 and 23. For example, the second gateline 22 is disposed between the pixel electrodes 11 and 14, between thepixel electrodes 12 and 15, and between the pixel electrodes 13 and 16,and extended in parallel to the first gate lines 21. The second gateline 22 can be used to repair a broken line. The first gate lines 21 and23, the capacitor lines 41, the first source lines 31 and 33, the secondgate lines 22 and 24, and the second source lines 32 and 34 are not inelectric connection with each other.

FIG. 7 is a flowchart showing the steps in an operation of a repairmethod applied to an active matrix substrate of an embodiment of thepresent disclosure. As shown in FIG. 7, the repair method includesfollowing steps. In step S1, a broken-line inspection process isperformed to inspect whether a broken-line occurs in above-mentionedgate line, source line or capacitor line. If there is no broken-line,the repair method is terminated. If a broken-line is inspected, a stepS2 is performed. In step S2, a repair-section forming process isperformed to cut off an undesired portion and form a plurality of repairsections overlapping the broken line respectively. Next, in step S3, aconnection process is performed to electrically connect the broken lineand the repair sections. In the embodiment, the aforementioned steps areperformed to repair the broken line in the active matrix substrate.

FIG. 2 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken first gate line is repaired.Please refer to FIG. 2. If it inspects that the first gate line 21 isbroken at the broken location 1, the following steps of the repairmethod of the active matrix substrate are executed. First, thebroken-line inspection process is performed to inspect, by a knownvisual, electric or optical inspection manner, whether the first gateline 21 or the second gate line 22 is broken. If only the first gateline 21 is inspected to be broken, a source line repair-section formingprocess is performed to cut off, such as by laser radiation manner, thecut portions C1, C2, C3 and C4 of the second source lines 32 and 34disposed at two sides of the pixel electrode 11 corresponding to thebroken location 1 of the first gate line 21, so as to form source linerepair sections 32P and 34P respectively including overlapping portionsR1, R2, R3 and R4 where the broken first gate line 21 and the secondgate line 22 are overlapped by the source line repair sections 32P and34P. The cut portions C1 and C4 locate near the same side of the brokenfirst gate line 21 opposite to the second gate line 22, and the cutportions C2 and C3 locate near the same side of the second gate line 22opposite to the broken first gate line 21. Next, a gate linerepair-section forming process is performed on the second gate line 22adjacent to the broken first gate line 21, to cut off the cut portionsC5 and C6 respectively located at two sides of the broken location 1 andthe two sides of the second source lines 32 and 34 disposed at two sidesof the broken location 1, so as to form the gate line repair section 22Pincluding overlapping portions R2 and R3 where the second source lines32 and 34 are overlapped with the gate line repair section 22P. Next,the connection process is performed to electrically connect the sourceline repair sections 32P and 34P to the first gate line 21 at theoverlapping portions R1 and R4, respectively, and connect the sourceline repair sections 32P and 34P to the gate line repair section 22P atthe overlapping portions R2 and R3. The connection process of thepresent disclosure can be implemented by laser irradiation weldingmanner; furthermore, the connection portions (such as the overlappingportion R1, R4, R2, and R3) of the repair sections can be coated withnano metal solution, and radiated by the laser to harden the nano metalsolution, thereby conduct the repair sections.

After the repair method is performed, the scan signal (shown by anarrowhead in FIG. 2) can be smoothly transmitted to downstream circuitsalong the first gate line 21 through the repair path formed by thesource line repair section 32P, the gate line repair section 22P and thesource line repair section 34P. As a result, the manufacturing yield ofthe liquid crystal display device can be improved.

FIG. 3 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken first gate line and the brokensecond gate line are repaired. Please refer to FIG. 3. If it inspectsthat the first gate line 21 and the second gate line 22 are broken atthe broken locations 1 and 2, respectively, the following steps of therepair method of the active matrix substrate are executed. First, thebroken-line inspection process is performed to inspect, by the knownvisual, electric or optical inspection manner, whether the first gateline 21 or the second gate line 22 is broken. If the first gate line 21and the second gate line 22 both are inspected to be broken, and thebroken locations 1 and 2 both locate between the pixel electrode 11 andthe pixel electrode 14, a source line repair-section forming process isperformed to cut off the cut portions C7, C9, C10 and C12 of the secondsource lines 32 and 34 disposed at two sides of the pixel electrode 11corresponding to the broken locations 1 and 2 of the first gate line 21and the second gate line 22, so as to form source line repair sections32P and 34P respectively including overlapping portions R1, R4, R5 andR6 where the broken first gate line 21 and the other second gate line 24are overlapped with the source line repair sections 32P and 34P. The cutportions C7 and C12 locate near the same side of the broken first gateline 21 opposite to the other second gate line 24, and the cut portionsC9 and C10 locate near the same side of the other second gate line 24opposite to the broken first gate line 21. Next, a gate linerepair-section forming process is performed on the other second gateline 24 to cut off, such as by laser radiation manner, the cut portionsC8 and C11 of the other second gate line 24 respectively located at twosides of the pixel electrode 11 and the outer sides of the second sourcelines 32 and 34 disposed at two sides of the broken location 1, so as toform the gate line repair section 24P including overlapping portions R5and R6 where the second source lines 32 and 34 are overlapped with thegate line repair section 24P. Next, the connection process is performedto electrically connect the source line repair sections 32P and 34P tothe broken first gate line 21 at the overlapping portions R1 and R4,respectively, and connect the source line repair sections 32P and 34P tothe gate line repair section 24P at the overlapping portions R5 and R6.The connection process of the present disclosure can be implemented bylaser irradiation welding manner; furthermore, nano metal solution canbe coated on the connection portions (such as the portion R1, R5, R4,and R6) of the repair sections, and the laser is used to radiate on theconnection portions to harden the nano metal solution, thereby conductthe repair sections.

After the repair method is performed, the scan signal (shown by anarrowhead in FIG. 3) can be smoothly transmitted to downstream circuitsalong the first gate line 21 through the repair path formed by thesource line repair section 32P, the capacitor line repair section 42Pand the source line repair section 34P. As a result, the manufacturingyield of the liquid crystal display device can be improved.

FIG. 4 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken first source line is repaired.Please refer to FIG. 4. If it inspects that the source line 31 is brokenat the broken location 3, the following steps of the repair method ofthe active matrix substrate are executed. First, the broken-lineinspection process is performed to inspect whether the first source line31 or the second source line 32 is broken. If only the first source line31 is inspected to be broken, a gate line repair-section forming processis performed to cut off the cut portions C5, C15, C13 and C16 of thesecond gate lines 22 and 24 disposed at two sides of the pixel electrode11 corresponding to the broken location 3 of the first source line 31,so as to form gate line repair sections 22P and 24P respectivelyincluding overlapping portions R2, R7, R8 and R9 where the broken firstsource line 31 and the second source line 32 are overlapped with thegate line repair sections 22P and 24P respectively. The cut portions C15and C16 locate near the same side of the broken first source line 31opposite to the second source line 32, and the cut portions C5 and C13locate near the same side of the second source line 32 opposite to thebroken first source line 31. Next, a source line repair-section formingprocess is performed on the second source line 32, adjacent to thebroken first source line 31, to cut off the cut portions C2 and C14respectively located at the outer sides of the second gate lines 22 and24 disposed at two sides of the pixel electrode 11, so as to form thesource line repair section 32P including overlapping portions R2 and R8where the second gate lines 22 and 24 are overlapped with the sourceline repair section 32P respectively. Next, the connection process isperformed to electrically connect the gate line repair sections 22P and24P to the broken first source line 31 at the overlapping portions R7and R9, respectively, and connect the source line repair sections 32P tothe gate line repair section 22P and 24P at the overlapping portions R2and R8. The connection process of the present disclosure can beimplemented by laser irradiation welding manner; furthermore, nano metalsolution can be coated on the connection portions (such as theoverlapping portion R2, R7, R8, and R9) of the repair sections, and thelaser is used to radiate on the connection portions to harden the nanometal solution, thereby conduct the repair sections.

After the repair method is performed, the data signal (shown by anarrowhead in FIG. 4) can be smoothly transmitted to downstream circuitsalong the first source line 31 through the repair path formed by thegate line repair section 22P, the source line repair section 32P and thegate line repair section 24P. As a result, the manufacturing yield ofthe liquid crystal display device can be improved.

FIG. 5 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken first source line and thebroken second source line are repaired. Please refer to FIG. 3. If itinspects that the first source line 31 and the second source line 32 arebroken at the broken locations 3 and 4, respectively, the followingsteps of the repair method of the active matrix substrate are executed.First, the broken-line inspection process is performed to inspectwhether the first source line 31 or the second source line 32 is broken.If the first source line 31 and the second source line 32 both areinspected to be broken, and the broken locations 3 and 4 both locatedbetween the pixel electrode 11 and the pixel electrode 13, a gate linerepair-section forming process is performed to cut off the cut portionsC1, C6, C3 and C4 of the second gate lines 22 and 24 disposed at twosides of the pixel electrode 11 corresponding to the broken locations 3and 4, so as to form gate line repair sections 22P and 24P respectivelyincluding overlapping portions R1, R2, R3 and R4 where the broken sourceline 31 and the other second source line 34 are overlapped with the gateline repair sections 22P and 24P. The cut portions C1 and C6 locate nearthe same side of the broken first source line 31 opposite to the othersecond source line 34, and the cut portions C3 and C4 locate near thesame side of the other second source line 34 opposite to the brokenfirst source line 31. The other second source line 34 can be a secondsource line which is the second nearest to the first source line 31.Next, a source line repair-section forming process is performed on theother second source line 34 to cut off the cut portions C2 and C5respectively located at the outer sides of the second gate lines 22 and24 disposed at two sides of the pixel electrode 11, so as to form thesource line repair section 34P including overlapping portions R2 and R3where the second gate lines 22 and 24 are overlapped with the sourceline repair section 34P. Next, the connection process is performed toelectrically connect the gate line repair sections 22P and 24P to thefirst source line 31 at the overlapping portions R1 and R4,respectively, and connect the gate line repair sections 22P and 24P tothe other second source line 34 at the overlapping portions R2 and R3.The connection process of the present disclosure can be implemented bylaser irradiation welding manner; furthermore, nano metal solution canbe coated on the connection portions (such as the portion R1, R2, R3,and R4) of the repair sections, and the laser is used to radiate on theconnection portions to harden the nano metal solution, thereby conductthe repair sections.

After the repair method is performed, the data signal (shown by anarrowhead in FIG. 5) can be smoothly transmitted to downstream circuitsalong the first source line 31 through the repair path formed by thegate line repair section 22P, the source line repair section 34P and thegate line repair section 24P. As a result, the manufacturing yield ofthe liquid crystal display device can be improved.

FIG. 6 is a plan view of an active matrix substrate of an embodiment ofthe present disclosure, after the broken capacitor line is repaired.Please refer to FIG. 6. If it inspects that the capacitor line 41 isbroken at the broken location 5, the following steps of the repairmethod of the active matrix substrate are executed. First, thebroken-line inspection process is performed to inspect whether thecapacitor line 41 is broken. If only the capacitor line 41 is inspectedto be broken, a source line repair-section forming process is performedto cut off the cut portions C1, C4, C2 and C3 of the second source lines32 and 34 disposed at two sides of the pixel electrode 11 correspondingto the broken location 5 of the capacitor line 41, so as to form sourceline repair sections 32P and 34P respectively including overlappingportions R1, R2, R3 and R4 where the broken capacitor line 41 and thesecond gate line 22 are overlapped with the source line repair sections32P and 34P. The cut portions C1 and C4 locate near the same side of thebroken capacitor line 41 opposite to the second gate line 22, and thecut portions C2 and C3 locate near the same side of the second gate line22 opposite to the broken capacitor line 41. Next, a gate linerepair-section forming process is performed on the second gate line 22to cut off the cut portions C5 and C6 respectively located at the outersides of the second source lines 32 and 34 disposed at two sides of thepixel electrode 11, so as to form a gate line repair section 22Pincluding overlapping portions R2 and R3 where the second source lines32 and 34 are overlapped with the gate line repair section 22P. Next,the connection process is performed to electrically connect the sourceline repair sections 32P and 34P to the capacitor line 41 at theoverlapping portions R1 and R4, respectively, and connect the gate linerepair sections 22P to the source line repair sections 32P and 34P atthe overlapping portions R2 and R3. The connection process of thepresent disclosure can be implemented by laser irradiation weldingmanner; furthermore, nano metal solution can be coated on the connectionportions (such as the portion R1, R2, R3, and R4) of the repairsections, and the laser is used to radiate on the connection portions toharden the nano metal solution, thereby conduct the repair sections.

After the repair method is performed, the capacitor signal (shown by anarrowhead in FIG. 6) can be smoothly transmitted to downstream circuitsalong the capacitor line 41 through the repair path formed by the sourceline repair section 32P, the gate line repair section 22P and the sourceline repair section 34P. As a result, the manufacturing yield of theliquid crystal display device can be improved.

In an embodiment, an area of each of the overlapping portions R1, R2,R3, R4, R5, R6, R7, R8 and R9 is at least 25 μm².

In an embodiment, the active matrix substrate of the present disclosurecan be applicable to, but not limited to, liquid crystal display device,display device, Q LED display device, curved display device, or otherdisplay device.

According to an embodiment, the repair method of the active matrixsubstrate is applicable to method of manufacturing liquid crystaldisplay device. According to aforementioned embodiment, the presentdisclosure provides the active matrix substrate with broken-line repairfunction, to improve the manufacturing yield of the liquid crystaldisplay device. Furthermore, the nano metal solution is coated at theconnection portions of the repair sections and is radiated by laser tobe hardened, thereby conducting the repair sections. Preferably, thenano metal solution includes organic solvent and metal nano particlesuniformly distributed in the organic solvent. Furthermore, the gatelines and the capacitor lines are formed separately, so that the gateline has lower load and the signal delay on the gate line can beimproved.

The present disclosure disclosed herein has been described by means ofspecific embodiments. However, numerous modifications, variations andenhancements can be made thereto by those skilled in the art withoutdeparting from the spirit and scope of the disclosure set forth in theclaims.

What is claimed is:
 1. An active matrix substrate, comprising: asubstrate; a plurality of pixel electrodes disposed on the substrate andarranged in a matrix form, so as to form a plurality of pixels; aplurality of first gate lines disposed between the plurality of pixelelectrodes respectively, and extended in parallel to each other; aplurality of first source lines disposed between the plurality of pixelelectrodes respectively, and extended in a direction crossing theplurality of first gate lines; a plurality of capacitor lines disposedbetween the plurality of first gate lines respectively, and extended atan angle to one another; a plurality of switch devices disposed on theplurality of pixel electrodes respectively, and electrically connectedto the plurality of pixel electrodes, the plurality of first gate lines,the plurality of capacitor lines and the plurality of first sourcelines, respectively; a plurality of second source lines disposed betweenthe plurality of pixel electrodes respectively, and extended in parallelto the plurality of first source lines; a plurality of second gate linesdisposed between the plurality of pixel electrodes respectively, andextended in parallel to the plurality of first gate lines; and whereinthe plurality of first gate lines, the plurality of capacitor lines, theplurality of first source lines, the plurality of second gate lines andthe plurality of second source lines are isolated from each other;wherein when one of the first gate lines is broken and one of the secondgate lines adjacent to the broken first gate line is also broken andbroken locations are between same two of the pixel electrodes, an endand another end of the broken first gate line are conducted through apair of source line repair sections formed by parts of the second sourcelines, and a gate line repair section formed by a part of the secondpate line.
 2. The active matrix substrate according to claim 1, whereinwhen one of the plurality of the first gate lines is broken, the end andthe another end of the broken first gate line are conducted through thesecond gate line adjacent to the broken first gate line, and a pair ofsource line repair sections formed by parts of the second source linesat two sides of the broken first gate line.
 3. The active matrixsubstrate according to claim 1, wherein when one of the first sourcelines is broken, the end and the another end of the broken first sourceline are conducted through one of the second source line adjacent to thefirst source line, and a pair of gate line repair sections formed byparts of the second gate lines at two sides of the broken first sourceline.
 4. The active matrix substrate according to claim 1, wherein whenone of the first source lines is broken, and one of the second sourcelines adjacent to the broken first source line is also broken and brokenlocations are between the same two of the pixel electrodes, the end andthe another end of the broken first source line is conducted through apair of gate line repair sections formed by a part of the second gatelines and a source line repair section formed by another part of thesecond source line.
 5. The active matrix substrate according to claim 1,wherein when one of the capacitor lines is broken, the end and theanother end of the broken capacitor line are conducted through a pair ofsource line repair sections formed by parts of the second source linescorresponding in position to two sides of the broken capacitor line, andone of the gate line repair section formed by a part of the second gateline.
 6. The active matrix substrate according to claim 1, wherein anarea of an overlapping portion between one of the second source line andone of the capacitor line is at least 25 μm².
 7. The active matrixsubstrate according to claim 1, wherein an area of an overlappingportion between one of the second source line and one of the second gateline is at least 25 μm².
 8. A display device, comprising the activematrix substrate according to claim
 1. 9. The display device accordingto claim 8, wherein when one of the plurality of the first gate lines isbroken, the end and the another end of the broken first gate line areconducted through one of the second gate line adjacent to the brokenfirst gate line, and a pair of source line repair sections formed byparts of the second source lines at two sides of the broken first gateline.
 10. The display device according to claim 8, wherein when one ofthe first source lines is broken, the end and the another end of thebroken first source line are conducted through one of the second sourceline adjacent to the broken first source line, and a pair of gate linerepair sections formed by parts of the gate lines at two sides of thebroken first source line.
 11. The display device according to claim 8,wherein when one of the first source lines is broken, and one of thesecond source lines adjacent to the broken first source line is alsobroken and broken locations are between the same two of the pixelelectrodes, the end and the another end of the broken first source lineare conducted through a pair of gate line repair sections formed byparts of the second gate lines, and a source line repair section formedby another part of the second source line.
 12. The display deviceaccording to claim 8, wherein when one of the capacitor lines is broken,the end and the another end of the broken capacitor line are conductedthrough a pair of source line repair sections formed by parts of thesecond source lines corresponding in position to two sides of the brokencapacitor line, and a gate line repair section formed by a part of thesecond gate lines.
 13. The display device according to claim 8, whereinan area of an overlapping portion between one of the second source lineand one of the capacitor line is at least 25 μm².
 14. The display deviceaccording to claim 13, wherein operations of cutting off and connectionare performed by laser radiation.
 15. The display device according toclaim 14, wherein connection areas are coated with nano metal solution,and the nano metal solution comprises organic solvent and metal nanoparticles uniformly distributed in the organic solvent; and wherein theconnection areas are radiated by laser to harden the nano metal solutionfor conduction.
 16. The display device according to claim 8, wherein anarea of an overlapping portion between one of the second source line andone of the second gate line is at least 25 μm².
 17. An active matrixsubstrate, comprising: a substrate; a plurality of pixel electrodesdisposed on the substrate and arranged in a matrix form to form aplurality of pixels; a plurality of first gate lines disposed betweenthe plurality of pixel electrodes respectively, and extended in parallelto each other; a plurality of first source lines disposed between theplurality of pixel electrodes respectively, and extended in a directioncrossing the plurality of first gate lines; a plurality of capacitorlines disposed between the plurality of first gate lines respectively,and extended at an angle to one another; a plurality of switch devicesdisposed on the plurality of pixel electrodes respectively, andelectrically connected to the plurality of pixel electrodes, theplurality of first gate lines, the plurality of capacitor lines and theplurality of first source lines, respectively; a plurality of secondsource lines disposed between the plurality of pixel electrodesrespectively, and extended in parallel to the plurality of first sourcelines; a plurality of second gate line disposed between the plurality ofpixel electrodes respectively, and extended in parallel to the pluralityof first gate lines; and wherein the plurality of first gate lines, theplurality of capacitor lines, the plurality of first source lines, theplurality of second gate lines, and the plurality of second source linesare not in electric connection with each other; wherein when one of thefirst gate lines is broken and one of the second gate lines adjacent tothe broken first gate line is also broken, and broken locations arebetween same two of the pixel electrodes, an end and another end of thebroken first gate line are conducted through a pair of source linerepair sections formed by parts of the second source lines, and a gateline repair section formed by parts of the second gate lines, andconnection areas of the gate line repair section or the source linerepair section are coated with nano metal solution; wherein when one ofthe first gate lines is broken and one of the second gate lines adjacentto the broken first (late line is also broken and broken locations arebetween the same two of the pixel electrodes, the end and the anotherend of the broken first gate line are conducted through a pair of sourceline repair sections formed by parts of the second source lines, and agate line repair section formed by a part of the second gate line. 18.The active matrix substrate according to claim 17, wherein the nanometal solution comprises organic solvent and metal nano particlesuniformly distributed in the organic solvent; connection portions areradiated by laser to harden the nano metal solution for conduction.